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June 2001 FDD3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 34 A, 100 V. R = 32 m @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 35 m @ V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. Low gate charge (57 nC typical) These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable Fast switching speed R specifications. DS(ON) High performance trench technology for extremely The result is a MOSFET that is easy and safer to drive low R DS(ON) (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. High power and current handling capability D D G G S TO-252 S Absolute Maximum Ratings TA=25oC unless ot... See More ⇒

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