View fdd3670 datasheet:

June 2001 FDD3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 34 A, 100 V. R = 32 m @ V = 10 V DS(ON) GSspecifically to improve the overall efficiency of DC/DC R = 35 m @ V = 6 V DS(ON) GSconverters using either synchronous or conventional switching PWM controllers. Low gate charge (57 nC typical) These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable Fast switching speed R specifications. DS(ON) High performance trench technology for extremely The result is a MOSFET that is easy and safer to drive low R DS(ON)(even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. High power and current handling capability DDGGSTO-252SAbsolute Maximum Ratings TA=25oC unless ot

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