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March 2010 FDD3672 N-Channel UltraFET Trench MOSFET 100V, 44A, 28m Features Applications rDS(ON) = 24m (Typ.), VGS = 10V, ID = 44A DC/DC converters and Off-Line UPS Qg(tot) = 24nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Voltage Synchronous Rectifier Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82760 D DRAIN (FLANGE) GATE G SOURCE TO-252AA S MOSFET Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 100 V VGS Gate to Source Voltage 20 V Drain Current 44 A Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) 31 A Continuous (Tamb = 25oC, VGS = 10V, R JA = 52... See More ⇒

 

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