View fdd3672 datasheet:

March 2010FDD3672N-Channel UltraFET Trench MOSFET100V, 44A, 28mFeatures Applications rDS(ON) = 24m (Typ.), VGS = 10V, ID = 44A DC/DC converters and Off-Line UPS Qg(tot) = 24nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Voltage Synchronous Rectifier Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pulse)Formerly developmental type 82760DDRAIN(FLANGE)GATEGSOURCETO-252AASMOSFET Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter Ratings UnitsVDSS Drain to Source Voltage 100 VVGS Gate to Source Voltage 20 VDrain Current44 AContinuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) 31 AContinuous (Tamb = 25oC, VGS = 10V, RJA = 52

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