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July 2000 FDD5680 N-Channel, PowerTrench MOSFET Features General Description This N-Channel MOSFET is produced using Fairchild 38 A, 60 V. RDS(on) = 0.021 @ VGS = 10 V Semiconductor's advanced PowerTrench process that has RDS(on) = 0.025 @ VGS = 6 V. been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior Low gate charge (33nC typical). switching performance. Fast switching speed. Applications High performance trench technology for extremely low RDS(on). DC/DC converter Motor drives D D G G S S TO-252 T =25oC unless otherwise noted A Absolute Maximum Ratings Symbol Parameter Ratings Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage V 20 ID Maximun Drain Current - Continuous (Note 1) 38 A (Note 1a) 8.5 Maximum Drain Current - Pulsed 100 PD Maximum Pow... See More ⇒

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