View fdd5680 datasheet:

July 2000FDD5680N-Channel, PowerTrench MOSFETFeaturesGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild 38 A, 60 V. RDS(on) = 0.021 @ VGS = 10 VSemiconductor's advanced PowerTrench process that hasRDS(on) = 0.025 @ VGS = 6 V.been especially tailored to minimize the on-stateresistance and yet maintain low gate charge for superior Low gate charge (33nC typical).switching performance. Fast switching speed.Applications High performance trench technology for extremelylow RDS(on). DC/DC converter Motor drivesDDGGSSTO-252T =25oC unless otherwise notedAAbsolute Maximum RatingsSymbol Parameter Ratings UnitsVDSS Drain-Source Voltage 60 VVGSS Gate-Source Voltage V20ID Maximun Drain Current - Continuous (Note 1) 38 A(Note 1a)8.5Maximum Drain Current - Pulsed 100PD Maximum Pow

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