All Transistors. Equivalents Search

 

View fdd5n50nz detailed specification:

fdd5n50nzfdd5n50nz

November 2009 UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5 Features Description RDS(on) = 1.38 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. Low Crss ( Typ. 4pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching Fast Switching performance, and withstand high energy pulse in the avalanche 100% Avalanche Tested and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor Improved dv/dt Capability correction. ESD Imoroved Capability RoHS Compliant D D D G G G S D-PAK S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* ... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 fdd5n50nz.pdf Design, MOSFET, Power

 fdd5n50nz.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdd5n50nz.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.