View fdd5n50nz datasheet:

November 2009UniFET-IITMFDD5N50NZN-Channel MOSFET 500V, 4A, 1.5Features Description RDS(on) = 1.38 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC)stripe, DMOS technology. Low Crss ( Typ. 4pF)This advance technology has been especially tailored to minimize on-state resistance, provide superior switching Fast Switching performance, and withstand high energy pulse in the avalanche 100% Avalanche Testedand commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor Improved dv/dt Capabilitycorrection. ESD Imoroved Capability RoHS CompliantDDDGGGSD-PAKSSMOSFET Maximum Ratings TC = 25oC unless otherwise noted*

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