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fdd6512a_fdu6512afdd6512a_fdu6512a

November 2001 FDD6512A/FDU6512A 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 36 A, 20 V RDS(ON) = 21 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 31 m @ VGS = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge (12 nC typical) low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package. Fast switching Applications High performance trench technology for extremely DC/DC converter low RDS(ON) Motor drives D D G I-PAK G S (TO-251AA) D-PAK TO-252 G D S (TO-252) S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage 12 V ID... See More ⇒

 

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