View fdd6512a fdu6512a datasheet:

November 2001FDD6512A/FDU6512A20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 36 A, 20 V RDS(ON) = 21 m @ VGS = 4.5 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 31 m @ VGS = 2.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate charge (12 nC typical)low gate charge, low RDS( ON) , fast switching speed andextremely low RDS(ON) in a small package. Fast switchingApplications High performance trench technology for extremely DC/DC converterlow RDS(ON) Motor drivesDDGI-PAKGS(TO-251AA)D-PAKTO-252G D S(TO-252)SAbsolute Maximum Ratings TA=25oC unless otherwise notedSymbol Parameter Ratings UnitsVDSS Drain-Source Voltage 20 VVGSS Gate-Source Voltage 12 VID

Keywords - ALL TRANSISTORS DATASHEET

 fdd6512a fdu6512a.pdf Design, MOSFET, Power

 fdd6512a fdu6512a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdd6512a fdu6512a.pdf Database, Innovation, IC, Electricity