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View fdd6637 f085 detailed specification:

December 2010 FDD6637_F085 P-Channel PowerTrench MOSFET -35V, -21A, 18m Applications Features Typ rDS(on) = 9.7m at VGS = -10V, ID =- 14A Inverter Typ rDS(on) = 14.4m at VGS = -4.5V, ID =- 11A Power Supplies Typ Qg(10) = 45nC at VGS = -10V High performance trench technology for extremely low rDS(on). Qualified to AEC Q101 RoHS Compliant 2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDD6637_F085 Rev. C FDD6637_F085 P-Channel PowerTrench MOSFET MOSFET Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage -35 V VDS(Avalanche) Drain to Source Avalanche Voltage (maximum) -45 V VGS Gate to Source Voltage 25 V Drain Current Continuous (TC ... See More ⇒

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