View fdd6637 f085 datasheet:

December 2010FDD6637_F085P-Channel PowerTrench MOSFET-35V, -21A, 18m ApplicationsFeatures Typ rDS(on) = 9.7m at VGS = -10V, ID =- 14A Inverter Typ rDS(on) = 14.4m at VGS = -4.5V, ID =- 11A Power Supplies Typ Qg(10) = 45nC at VGS = -10V High performance trench technology for extremely low rDS(on). Qualified to AEC Q101 RoHS Compliant2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.comFDD6637_F085 Rev. CFDD6637_F085P-Channel PowerTrench MOSFETMOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter Ratings UnitsVDSS Drain to Source Voltage -35 VVDS(Avalanche) Drain to Source Avalanche Voltage (maximum) -45 VVGS Gate to Source Voltage 25 VDrain Current Continuous (TC

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