All Transistors. Equivalents Search

View fdd6n50f fdu6n50f detailed specification:

July 2007 UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15 Features Description RDS(on) = 0.95 ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchild s proprietary, planar Low gate charge ( Typ. 15nC) stripe, DMOS technology. Low Crss ( Typ. 6.3pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pulse in the avalanche 100% avalanche tested and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor Improved dv/dt capability correction. RoHS compliant D D G G S I-PAK G S D D-PAK FDU Series FDD Series S MOSFET Maximum Ratings TC = 25oC unless othe... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 fdd6n50f fdu6n50f.pdf Design, MOSFET, Power

 fdd6n50f fdu6n50f.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdd6n50f fdu6n50f.pdf Database, Innovation, IC, Electricity