View fdd6n50f fdu6n50f datasheet:

July 2007UniFETTMFDD6N50F / FDU6N50FtmN-Channel MOSFET 500V, 5.5A, 1.15Features Description RDS(on) = 0.95 ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchilds proprietary, planar Low gate charge ( Typ. 15nC)stripe, DMOS technology. Low Crss ( Typ. 6.3pF)This advance technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switchingperformance, and withstand high energy pulse in the avalanche 100% avalanche testedand commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor Improved dv/dt capabilitycorrection. RoHS compliantDDGGSI-PAKG SDD-PAKFDU SeriesFDD SeriesSMOSFET Maximum Ratings TC = 25oC unless othe

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