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June 2014 FDMA905P Single P-Channel PowerTrench MOSFET -12 V, -10 A, 16 m Features General Description Max rDS(on) = 16 m at VGS = -4.5 V, ID = -10 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 21 m at VGS = -2.5 V, ID = -8.9 A applications. It features a MOSFET with low on-state resistance. Max rDS(on) = 82 m at VGS = -1.8 V, ID = -4.5 A The MicroFET 2X2 package offers exceptional thermal Low profile - 0.8 mm maximum - in the new package performance for its physical size and is well suited to linear mode MicroFET 2X2 mm applications. Free from halogenated compounds and antimony oxides RoHS Compliant Pin 1 G D D Bottom Drain Contact D 1 6 D Drain Source D 5 2 D 3 4 G S D D S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 C unless ... See More ⇒

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