View fdma905p datasheet:

June 2014FDMA905PSingle P-Channel PowerTrench MOSFET -12 V, -10 A, 16 mFeatures General Description Max rDS(on) = 16 m at VGS = -4.5 V, ID = -10 AThis device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 21 m at VGS = -2.5 V, ID = -8.9 Aapplications. It features a MOSFET with low on-state resistance. Max rDS(on) = 82 m at VGS = -1.8 V, ID = -4.5 AThe MicroFET 2X2 package offers exceptional thermal Low profile - 0.8 mm maximum - in the new package performance for its physical size and is well suited to linear mode MicroFET 2X2 mm applications. Free from halogenated compounds and antimony oxides RoHS Compliant Pin 1GD DBottom Drain ContactD 1 6 DDrainSourceD 52 D3 4GSD D SMicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25C unless

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 fdma905p.pdf Design, MOSFET, Power

 fdma905p.pdf RoHS Compliant, Service, Triacs, Semiconductor

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