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June 2014 FDMA910PZ Single P-Channel PowerTrench MOSFET -20 V, -9.4 A, 20 m Features General Description Max rDS(on) = 20 m at VGS = -4.5 V, ID = -9.4 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 24 m at VGS = -2.5 V, ID = -8.6 A applications.It features a MOSFET with low on-state resistance Max rDS(on) = 34 m at VGS = -1.8 V, ID = -7.2 A and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical Low Profile - 0.8 mm maximum in the new package MicroFET size and is well suited to linear mode applications. 2x2 mm HBM ESD protection level > 2.8k V typical (Note 3) Free from halogenated compounds and antimony oxides RoHS Compliant Pin 1 G D D Bottom Drain Contact D 1 6 D Drain Source D 5 2 D ... See More ⇒

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