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July 2013 FDMC7208S Dual N-Channel PowerTrench MOSFET Q1 30 V, 12 A, 9.0 m Q2 30 V, 16 A, 6.4 m Features General Description Q1 N-Channel This device includes two 30V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is en- Max rDS(on) = 9.0 m at VGS = 10 V, ID = 12 A hanced for exceptional thermal performance. Max rDS(on) = 11.0 m at VGS = 4.5 V, ID = 11 A Applications Q2 N-Channel Computing Max rDS(on) = 6.4 m at VGS = 10 V, ID = 16 A Communications Max rDS(on) = 7.5 m at VGS = 4.5 V, ID = 13.5 A General Purpose Point of Load Termination is Lead-free and RoHS Compliant Notebook System Pin 1 G1 S1 S1 S1 D1 D2 G2 S2 S2 S2 Power 33 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Q1 Q2 Units VDS Drain to Source Voltage 30 30 V VGS Gate to Source Voltage (Note 4) 20 12 V ... See More ⇒

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