View fdmc7208s datasheet:

July 2013FDMC7208SDual N-Channel PowerTrench MOSFET Q1: 30 V, 12 A, 9.0 m Q2: 30 V, 16 A, 6.4 mFeatures General DescriptionQ1: N-ChannelThis device includes two 30V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is en- Max rDS(on) = 9.0 m at VGS = 10 V, ID = 12 Ahanced for exceptional thermal performance. Max rDS(on) = 11.0 m at VGS = 4.5 V, ID = 11 AApplicationsQ2: N-Channel Computing Max rDS(on) = 6.4 m at VGS = 10 V, ID = 16 A Communications Max rDS(on) = 7.5 m at VGS = 4.5 V, ID = 13.5 A General Purpose Point of Load Termination is Lead-free and RoHS Compliant Notebook SystemPin 1G1 S1 S1 S1D1D2G2 S2 S2 S2Power 33MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Q1 Q2 UnitsVDS Drain to Source Voltage 30 30 VVGS Gate to Source Voltage (Note 4) 20 12 V

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