View fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu detailed specification:
October 2008 QFET FQB7N60 / FQI7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well RoHS Compliant suited for high efficiency switch mode power supply. D D G G S D2-PAK I2-PAK G D S FQB Series FQI Series S Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter FQB7N60 / FQI7N60 Uni... See More ⇒
Keywords - ALL TRANSISTORS SPECS
fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu.pdf Design, MOSFET, Power
fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu.pdf RoHS Compliant, Service, Triacs, Semiconductor
fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu.pdf Database, Innovation, IC, Electricity
