All Transistors. Datasheet

 

View fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu datasheet:

fqb7n60tm_fqb7n60_fqi7n60_fqi7n60tufqb7n60tm_fqb7n60_fqi7n60_fqi7n60tu

October 2008QFETFQB7N60 / FQI7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are well RoHS Compliant suited for high efficiency switch mode power supply.D DG GS D2-PAK I2-PAKGD SFQB Series FQI SeriesSAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter FQB7N60 / FQI7N60 Uni

 

Keywords - ALL TRANSISTORS DATASHEET

 fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu.pdf Design, MOSFET, Power

 fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.