View fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu datasheet:
October 2008QFETFQB7N60 / FQI7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are well RoHS Compliant suited for high efficiency switch mode power supply.D DG GS D2-PAK I2-PAKGD SFQB Series FQI SeriesSAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter FQB7N60 / FQI7N60 Uni
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fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu.pdf Design, MOSFET, Power
fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu.pdf RoHS Compliant, Service, Triacs, Semiconductor
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