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View fqb7n80tm am002 fqi7n80tu fqi7n80 fqb7n80 detailed specification:

October 2008 QFET FQB7N80 / FQI7N80 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 19 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well RoHS Compliant suited for high efficiency switch mode power supply. D D G G S D -PAK I -PAK G D S FQB Series FQI Series S AbsoIute Maximum Ratings TC = 25 C unless otherwise noted SymboI Parameter FQB7N80 / FQI7N80... See More ⇒

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 fqb7n80tm am002 fqi7n80tu fqi7n80 fqb7n80.pdf Design, MOSFET, Power

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