All Transistors. Datasheet

 

View fqb7n80tm am002 fqi7n80tu fqi7n80 fqb7n80 datasheet:

fqb7n80tm_am002_fqi7n80tu_fqi7n80_fqb7n80fqb7n80tm_am002_fqi7n80tu_fqi7n80_fqb7n80

October 2008QFETFQB7N80 / FQI7N80800V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 19 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are well RoHS Compliant suited for high efficiency switch mode power supply.D DG GS D -PAK I -PAKGD SFQB Series FQI SeriesSAbsoIute Maximum Ratings TC = 25C unless otherwise notedSymboI Parameter FQB7N80 / FQI7N80

 

Keywords - ALL TRANSISTORS DATASHEET

 fqb7n80tm am002 fqi7n80tu fqi7n80 fqb7n80.pdf Design, MOSFET, Power

 fqb7n80tm am002 fqi7n80tu fqi7n80 fqb7n80.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqb7n80tm am002 fqi7n80tu fqi7n80 fqb7n80.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.