View fqb7n80tm am002 fqi7n80tu fqi7n80 fqb7n80 datasheet:
October 2008QFETFQB7N80 / FQI7N80800V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 19 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are well RoHS Compliant suited for high efficiency switch mode power supply.D DG GS D -PAK I -PAKGD SFQB Series FQI SeriesSAbsoIute Maximum Ratings TC = 25C unless otherwise notedSymboI Parameter FQB7N80 / FQI7N80
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fqb7n80tm am002 fqi7n80tu fqi7n80 fqb7n80.pdf Design, MOSFET, Power
fqb7n80tm am002 fqi7n80tu fqi7n80 fqb7n80.pdf RoHS Compliant, Service, Triacs, Semiconductor
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