View fqd7n20tf fqd7n20tm fqd7n20 fqu7n20 detailed specification:
October 2008 QFET FQD7N20 / FQU7N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.3A, 200V, RDS(on) = 0.69 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.0 nC) planar stripe, DMOS technology. Low Crss ( typical 9.0 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well RoHS Compliant suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control. D D G D-PAK I-PAK G S FQD Series G FQU Series D S S A... See More ⇒
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fqd7n20tf fqd7n20tm fqd7n20 fqu7n20.pdf Design, MOSFET, Power
fqd7n20tf fqd7n20tm fqd7n20 fqu7n20.pdf RoHS Compliant, Service, Triacs, Semiconductor
fqd7n20tf fqd7n20tm fqd7n20 fqu7n20.pdf Database, Innovation, IC, Electricity
