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April 2007 QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 44 nC) DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especially tailored to mini- Fast switching mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and 100% avalanche tested commutation mode. These devices are well suited for high effi- Improved dv/dt capability ciency switched mode power supplies, active power factor cor- rection, electronic lamp ballasts based on half bridge topology. D G TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings... See More ⇒

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