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November 2013 FQP13N50C / FQPF13N50C N-Channel QFET MOSFET 500 V, 13 A, 480 m Description Features These N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 6.5 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 43 nC) technology has been especially tailored to minimize on- Low Crss (Typ. 20 pF) state resistance, provide superior switching performance, 100% Avalanche Tested and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D G G DS G DS TO-220 TO-220F S o Absolute Maximum Ratings TC = 25 C unless otherwise noted. Symbol ... See More ⇒

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