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November 2013FQP13N50C / FQPF13N50CN-Channel QFET MOSFET500 V, 13 A, 480 mDescriptionFeaturesThese N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, ID = 6.5 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 43 nC)technology has been especially tailored to minimize on- Low Crss (Typ. 20 pF)state resistance, provide superior switching performance, 100% Avalanche Testedand withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.DGGDS GDSTO-220 TO-220FSoAbsolute Maximum Ratings TC = 25 C unless otherwise noted.Symbol

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