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May 2006 TM FRFET FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features Description 13A, 500V, RDS(on) = 0.54 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (typical 43 nC) DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially tailored to mini- Fast switching mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and 100% avalanche tested commutation mode. These devices are well suited for high effi- Improved dv/dt capability cient switched mode power supplies and active power factor correction. Fast recovery body diode (typical 100ns) D G TO-220F TO-220 G D S G D S FQPF Series FDP Series S Absolute Maximum Ratings Symbol Pa... See More ⇒

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