View fqp13n50cf fqpf13n50cf datasheet:

May 2006TMFRFETFQP13N50CF / FQPF13N50CF 500V N-Channel MOSFETFeatures Description 13A, 500V, RDS(on) = 0.54 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 43 nC)DMOS technology. Low Crss (typical 20pF)This advanced technology has been especially tailored to mini- Fast switching mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and 100% avalanche testedcommutation mode. These devices are well suited for high effi- Improved dv/dt capability cient switched mode power supplies and active power factorcorrection. Fast recovery body diode (typical 100ns)DGTO-220FTO-220G D SG D SFQPF SeriesFDP SeriesSAbsolute Maximum RatingsSymbol Pa

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