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HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and 35A, 1200V, TC = 25oC HGT1S10N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device Short Circuit Rating has the high input impedance of a MOSFET and the low on- Low Conduction Loss state conduction loss of a bipolar transistor. Avalanche Rated The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low Thermal Impedance SPICE Model conduction losses are essential, such as AC and DC motor Tempe... See More ⇒

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