View hgt1s10n120bn hgth10n120bn hgtp10n120bn datasheet:

HGTG10N120BN, HGTP10N120BN,HGT1S10N120BNSData Sheet August 200235A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTG10N120BN, HGTP10N120BN and 35A, 1200V, TC = 25oCHGT1S10N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oCvoltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device Short Circuit Ratinghas the high input impedance of a MOSFET and the low on- Low Conduction Lossstate conduction loss of a bipolar transistor. Avalanche RatedThe IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low Thermal Impedance SPICE Modelconduction losses are essential, such as: AC and DC motor Tempe

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