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HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching 60A, 600V, TC = 25oC device combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. This device has the high input impedance of a Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only Short Circuit Rating moderately between 25oC and 150oC. Low Conduction Loss The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low Packaging conduction losses are essential, such as AC and DC motor JEDEC STYLE TO-247 controls, power supplies and drivers for solenoids, relays and contactors. Formerly ... See More ⇒

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