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View irf540 rf1s540sm detailed specification:

IRF540, RF1S540SM Data Sheet January 2002 28A, 100V, 0.077 Ohm, N-Channel Power Features MOSFETs 28A, 100V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.077 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode Nanosecond Switching Speeds of operation. All of these power MOSFETs are designed for Linear Transfer Characteristics applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high High Input Impedance power bipolar switching transistors requiring high speed and Related Literature low gate drive power. These types can be operated directly - TB334 Guidelines for Soldering Surface Mount from integra... See More ⇒

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