View irf540 rf1s540sm datasheet:

IRF540, RF1S540SMData Sheet January 200228A, 100V, 0.077 Ohm, N-Channel Power FeaturesMOSFETs 28A, 100VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.077power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode Nanosecond Switching Speedsof operation. All of these power MOSFETs are designed for Linear Transfer Characteristicsapplications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high High Input Impedancepower bipolar switching transistors requiring high speed and Related Literaturelow gate drive power. These types can be operated directly - TB334 Guidelines for Soldering Surface Mount from integra

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