View irf620b detailed specification:
November 2001 IRF620B/IRFS620B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.0A, 200V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25 C unl... See More ⇒
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irf620b.pdf Design, MOSFET, Power
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