All Transistors. Equivalents Search

View ss8550g detailed specification:

SS8550G Plastic-Encapsulate Transistors Simplified outline SS8550G TRANSISTOR NPN TO-92 Features Power dissipation 1.EMITTER PC 1 W (Ta=25 ) 2.BASE 3.COLLECTOR 123 Maximum Ratings(T a=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A Tj Junction Temperature 150 Tstg Storage Temperature -55-150 Electrical Characteristics Tamb=25 unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100uA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100 A, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 A Emitter cut-off ... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 ss8550g.pdf Design, MOSFET, Power

 ss8550g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ss8550g.pdf Database, Innovation, IC, Electricity