View ss8550g datasheet:

SS8550GPlastic-Encapsulate Transistors Simplified outlineSS8550G TRANSISTOR NPN TO-92Features Power dissipation 1.EMITTER PC : 1 W (Ta=25 ) 2.BASE 3.COLLECTOR123 Maximum Ratings(Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A Tj Junction Temperature 150 Tstg Storage Temperature -55-150 Electrical CharacteristicsTamb=25 unless otherwise specified Parameter Symbol Test conditions Min Typ Max UnitCollector-base breakdown voltage V(BR)CBO IC=-100uA, IE=0 -40 VCollector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 VEmitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 VCollector cut-off current ICBO VCB=-40V, IE=0 -0.1 A Emitter cut-off

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