All Transistors. Equivalents Search

View mje13001c1 detailed specification:

MJE13001C1(3DD13001C1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit VCBO 600 V VCEO 400 V VEBO 9.0 V IC 0.25 A PC(Ta=25 ) 1.0 W Tj 150 Tstg -55 150 /Electrical characteristics(Ta=25 ) Rating Symbol Test condition Unit Min Typ Max VCBO IC=1mA IE=0 600 V VCEO IC=10mA IB=0 400 V VEBO IE=1mA IC=0 9.0 V ICBO VCB=600V IE=0 0.1 mA ICEO VCE=400V IB=0 0.1 mA IEBO VEB=9.0V IC=0 0.1 mA hFE VCE=20V IC=20mA 10 40 VCE(sat) IC=50mA IB=10mA 0.5 V VCE(sat) IC=100mA IB=20mA 0.6 V VBE(sat) IC=100mA IB=20mA 1.2 V fT VCE=20V IC=20mA f=1.0MHz 5.0 MHz ts 3 s VCE=5V IC=100mA (UI9600) tf 0... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 mje13001c1.pdf Design, MOSFET, Power

 mje13001c1.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mje13001c1.pdf Database, Innovation, IC, Electricity