View mje13001c1 datasheet:

MJE13001C1(3DD13001C1) NPN /SILICON NPN TRANSISTOR:Purpose: High frequency electronic lighting ballast applications./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 600 VVCEO 400 VVEBO 9.0 VIC 0.25 APC(Ta=25) 1.0 WTj 150 Tstg -55150 /Electrical characteristics(Ta=25)Rating Symbol Test condition Unit Min Typ MaxVCBO IC=1mA IE=0 600 VVCEO IC=10mA IB=0 400 VVEBO IE=1mA IC=0 9.0 VICBO VCB=600V IE=0 0.1 mAICEO VCE=400V IB=0 0.1 mAIEBO VEB=9.0V IC=0 0.1 mAhFE VCE=20V IC=20mA 10 40VCE(sat) IC=50mA IB=10mA 0.5 VVCE(sat) IC=100mA IB=20mA 0.6 VVBE(sat) IC=100mA IB=20mA 1.2 VfT VCE=20V IC=20mA f=1.0MHz 5.0 MHzts 3 sVCE=5V IC=100mA(UI9600)tf 0

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