View mje13003hn6 detailed specification:
MJE13003HN6(3DD13003HN6) NPN /SILICON NPN TRANSISTOR Purpose For switching power supply and other power switching circuit. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 1400 V CBO V 800 V CEO V 9 V EBO I 1.5 A C P (Ta=25 ) 1.25 W C P (Tc=25 ) 30 W C T 150 j T -55 150 stg /Electrical characteristics(Ta=25 ) Rating Symbol Test condition Unit Min Typ Max V I =1mA I =0 1400 V CBO C E V I =10mA I =0 800 V CEO C B V I =1mA I =0 9 V EBO E C I V =1400V I =0 0.1 mA CBO CB E I V =800V I =0 0.1 mA CEO CE B I V =9V I =0 0.1 mA EBO EB C h V =5V I =50mA 10 40 FE CE C h V =5V I =1mA 8 FE CE C V... See More ⇒
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mje13003hn6.pdf Design, MOSFET, Power
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BJT: GA1A4M | SBT42 | 2SA200-Y
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