View mje13003hn6 datasheet:

MJE13003HN6(3DD13003HN6) NPN /SILICON NPN TRANSISTOR : Purpose: For switching power supply and other power switching circuit. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 1400 V CBO V 800 V CEO V 9 V EBO I 1.5 A C P (Ta=25) 1.25 W CP (Tc=25) 30 W CT 150 j T -55150 stg /Electrical characteristics(Ta=25) Rating Symbol Test condition Unit Min Typ Max V I =1mA I =0 1400 V CBO C EV I =10mA I =0 800 V CEO C BV I =1mA I =0 9 V EBO E CI V =1400V I =0 0.1 mA CBO CB EI V =800V I =0 0.1 mA CEO CE BI V =9V I =0 0.1 mA EBO EB Ch V =5V I =50mA 10 40 FE CE Ch V =5V I =1mA 8 FE CE CV

Keywords - ALL TRANSISTORS DATASHEET

 mje13003hn6.pdf Design, MOSFET, Power

 mje13003hn6.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mje13003hn6.pdf Database, Innovation, IC, Electricity