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View mrf18060a detailed specification:

Document Number MRF18060A Freescale Semiconductor Rev. 11, 10/2008 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from MRF18060ALR3 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Typical GSM Performance @ 1805 MHz Power Gain 13 dB @ 60 Watts Efficiency 45% @ 60 Watts 1805 -1880 MHz, 60 W, 26 V Capable of Handling 10 1 VSWR, @ 26 Vdc, 1840 MHz, 60 Watts CW LATERAL N-CHANNEL Output Power RF POWER MOSFET Features Internally Matched for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Excellent Thermal Stability Av... See More ⇒

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