View mrf18060a datasheet:

Document Number: MRF18060AFreescale SemiconductorRev. 11, 10/2008Technical DataRF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETDesigned for PCN and PCS base station applications with frequencies fromMRF18060ALR31800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifierapplications. To be used in Class AB for PCN - PCS/cellular radio and WLLapplications. Typical GSM Performance @ 1805 MHzPower Gain 13 dB @ 60 WattsEfficiency 45% @ 60 Watts1805 -1880 MHz, 60 W, 26 V Capable of Handling 10:1 VSWR, @ 26 Vdc, 1840 MHz, 60 Watts CWLATERAL N-CHANNELOutput PowerRF POWER MOSFETFeatures Internally Matched for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Excellent Thermal Stability Av

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