View s8550 detailed specification:
FEATURES High Collector Current SOT-23 Complementary to S8050 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO IC Collector Current -0.5 A P Collector Power Dissipation 300 mW C R Thermal Resistance From Junction To Ambient 417 /W JA T Junction Temperature 150 j T Storage Temperature -55 +150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO -40 V IC = -100 A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO -5 V IE= -100 A, IC=0 Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 A Collector cut-off current ICE... See More ⇒
Keywords - ALL TRANSISTORS SPECS
s8550.pdf Design, MOSFET, Power
s8550.pdf RoHS Compliant, Service, Triacs, Semiconductor
s8550.pdf Database, Innovation, IC, Electricity
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