All Transistors. Datasheet

 

View s8550 datasheet:

s8550s8550

FEATURES High Collector Current SOT-23 Complementary to S8050 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBOV Collector-Emitter Voltage -25 V CEOV Emitter-Base Voltage -5 V EBOIC Collector Current -0.5 A P Collector Power Dissipation 300 mW CR Thermal Resistance From Junction To Ambient 417 /W JAT Junction Temperature 150 jT Storage Temperature -55+150 stgELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO -40 VIC = -100A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 VEmitter-base breakdown voltage V(BR)EBO -5 VIE= -100A, IC=0 Collector cut-off current ICBO VCB= -40V, IE=0 -0.1A Collector cut-off current ICE

 

Keywords - ALL TRANSISTORS DATASHEET

 s8550.pdf Design, MOSFET, Power

 s8550.pdf RoHS Compliant, Service, Triacs, Semiconductor

 s8550.pdf Database, Innovation, IC, Electricity

 

 
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