All Transistors. Equivalents Search

 

View gt10n10 detailed specification:

gt10n10gt10n10

GOFORD GT10N10 Description The GT10N10 uses advanced trench technology and design to provide excellent R , low gate charge. This device is DS(ON) suitable for use in Synchronous-recification application. General Features Schematic Diagram VDSS RDS O N RDS O N ID @ (Typ) @ (Typ) 10V 4.5V 7 m m A 100V 115 150 High power and current handing capability Lead free product is acquired Surface mount package Marking and Pin Assignment RoHS Compliant Application Consumer electronic power supply Isolated DC/DC converter Motor control TO-252 Ordering Information Part Number Marking Case Packaging TO-252 GT10N10 GT10N10 2500pcs/Reel Absolute Maximum Ratings (TA=25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 gt10n10.pdf Design, MOSFET, Power

 gt10n10.pdf RoHS Compliant, Service, Triacs, Semiconductor

 gt10n10.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


     

social 

LIST

Last Update

BJT: GA1A4M | SBT42 | 2SA200-Y

 

 

 
Back to Top

 

Popular searches

irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet

 


 
.