View gt10n10 detailed specification:
GOFORD GT10N10 Description The GT10N10 uses advanced trench technology and design to provide excellent R , low gate charge. This device is DS(ON) suitable for use in Synchronous-recification application. General Features Schematic Diagram VDSS RDS O N RDS O N ID @ (Typ) @ (Typ) 10V 4.5V 7 m m A 100V 115 150 High power and current handing capability Lead free product is acquired Surface mount package Marking and Pin Assignment RoHS Compliant Application Consumer electronic power supply Isolated DC/DC converter Motor control TO-252 Ordering Information Part Number Marking Case Packaging TO-252 GT10N10 GT10N10 2500pcs/Reel Absolute Maximum Ratings (TA=25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ... See More ⇒
Keywords - ALL TRANSISTORS SPECS
gt10n10.pdf Design, MOSFET, Power
gt10n10.pdf RoHS Compliant, Service, Triacs, Semiconductor
gt10n10.pdf Database, Innovation, IC, Electricity
