View gt10n10 datasheet:

GOFORD GT10N10Description The GT10N10 uses advanced trench technology and design to provide excellent R , low gate charge. This device is DS(ON)suitable for use in Synchronous-recification application. General Features Schematic Diagram VDSS RDS O N RDS O N ID @ (Typ) @ (Typ) 10V 4.5V 7 m m A 100V 115 150 High power and current handing capability Lead free product is acquired Surface mount package Marking and Pin Assignment RoHS Compliant Application Consumer electronic power supply Isolated DC/DC converter Motor control TO-252 Ordering Information Part Number Marking Case Packaging TO-252 GT10N10 GT10N10 2500pcs/Reel Absolute Maximum Ratings (TA=25unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V Drain Current-Continuous

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 gt10n10.pdf Design, MOSFET, Power

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