View rfg50n06 rfp50n06 rf1s50n06 rf1s50n06sm detailed specification:

rfg50n06_rfp50n06_rf1s50n06_rf1s50n06smrfg50n06_rfp50n06_rf1s50n06_rf1s50n06sm

RFG50N06, RFP50N06, S E M I C O N D U C T O R RF1S50N06, RF1S50N06SM 50A, 60V, Avalanche Rated N-Channel December 1995 Enhancement-Mode Power MOSFETs Features Packages JEDEC STYLE TO-247 50A, 60V SOURCE rDS(ON) = 0.022 DRAIN GATE Temperature Compensating PSPICE Model DRAIN Peak Current vs Pulse Width Curve (BOTTOM SIDE METAL) UIS Rating Curve +175oC Operating Temperature Description The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs are manufac- JEDEC TO-220AB tured using the MegaFET process. This process, which uses SOURCE feature sizes approaching those of LSI integrated circuits DRAIN GATE gives optimum utilization of silicon, resulting in outstanding DRAIN (FLANGE) performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay driv... See More ⇒

 

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 rfg50n06 rfp50n06 rf1s50n06 rf1s50n06sm.pdf Design, MOSFET, Power

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