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View 2sa1810 detailed specification:

2SA1810 Silicon PNP Epitaxial Application High frequency amplifier Features Excellent high frequency characteristics fT = 300 MHz typ High voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ Suitable for wide band video amplifier Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 2SA1810 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCEO 200 V Emitter to base voltage VEBO 5 V Collector current IC 0.2 A Collector peak current IC(peak) 0.5 A Collector power dissipation PC 1.25 W PC*1 10 Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Note 1. Value at TC = 25 C. Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 200 ... See More ⇒

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