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HAF1004(L), HAF1004(S) Silicon P Channel MOS FET Series Power Switching ADE-208-629B (Z) 3rd. Edition May 2002 Description This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down circuit in the gate area. And this circuit operation to shut down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features Logic level operation (-4 to -6 V Gate drive) High endurance capability against to the short circuit Built in the over temperature shut down circuit Latch type shut down operation (Need 0 voltage recovery) Outline DPAK-2 D 2, 4 4 4 1 G Gate resistor 1 2 Tempe- Latch Gate 3 rature circuit shut- scncing down circuit circuit 1. Gate 2. Drain 1 2 3. Source 3 3 4. Drain S HA... See More ⇒

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